深圳市拓瑞鑫科技有限公司

FEATURES • Voltage Supply - 2.70V ~ 3.60V • Organization - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K + 64) x 8bit • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte • Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 25μs(Max.) - Serial Access : 25ns(Min.) 512M x 8 Bit / 1G x 8 Bit NAND Flash Memory • Fast Write Cycle Time - Page Program time : 200μs(Typ.) - Block Erase Time : 1.5ms(Typ.) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Reliable CMOS Floating-Gate Technology -Endurance : 100K Program/Erase Cycles(with 1bit/512Byte ECC) - Data Retention : 10 Years • Command Driven Operation • Intelligent Copy-Back with internal 1bit/528Byte EDC • Unique ID for Copyright Protection • Package : - K9F4G08U0A-PCB0/PIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9F4G08U0A-ICB0/IIB0 52 - Pin ULGA (12 x 17 / 1.00 mm pitch) - K9K8G08U1A-ICB0/IIB0 52 - Pin ULGA (12 x 17 / 1.00 mm pitch)